r07ds1249ej0100 rev.1.00 page 1 of 6 mar 02, 2015 preliminary data sheet NP179N055TUK 55 v ? 180 a ? n-channel power mos fet application: automotive description the NP179N055TUK is n-channel mos field effect transistors designed for high current switching applications. features ? super low on-state resistance r ds(on) = 1.75 m max. (v gs = 10 v, i d = 90 a) ? low ciss ciss = 9300 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package NP179N055TUK-e1-ay *1 pure sn (tin) tape 800 p/reel taping (e1 type) to-263-7pin NP179N055TUK-e2-ay *1 taping (e2 type) note: * 1 pb-free (this product does not contain pb in the external electrode) absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 55 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 180 a drain current (pulse) *1 i d(pulse) 720 a total power dissipation (t c = 25c) p t1 288 w total power dissipation (t a = 25c) *2 p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to +175 c repetitive avalanche current *3 i ar 59 a repetitive avalanche energy * 3 e ar 348 mj notes: *1 t c = 25c, p w 10 s, duty cycle 1% * 2 mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) *3 r g = 25 , v gs = 20 v 0 v thermal resistance channel to case thermal resistance r th(ch-c) 0.52 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w r07ds1249ej0100 rev.1.00 mar 02, 2015
NP179N055TUK preliminary r07ds1249ej0100 rev.1.00 page 2 of 6 mar 02, 2015 electrical characteristics (t a = 25c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? ? 1 a v ds = 55 v, v gs = 0 v gate leakage current i gss ? ? 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 2.0 3.0 4.0 v v ds = v gs , i d = 250 a forward transfer admittance * 1 | y fs | 65 150 ? s v ds = 5 v, i d = 90 a drain to source on-state resistance *1 r ds(on) ? 1.45 1.75 m v gs = 10 v, i d = 90 a input capacitance c iss ? 9300 13950 pf v ds = 25 v v gs = 0 v f = 1 mhz output capacitance c oss ? 920 1380 pf reverse transfer capacitance c rss ? 310 560 pf turn-on delay time t d(on) ? 35 80 ns v dd = 28 v, i d = 90 a v gs = 10 v r g = 0 rise time t r ? 12 30 ns turn-off delay time t d(off) ? 110 220 ns fall time t f ? 13 40 ns total gate charge q g ? 160 240 nc v dd = 44 v v gs = 10 v i d = 180 a gate to source charge q gs ? 42 ? nc gate to drain charge q gd ? 42 ? nc body diode forward voltage * 1 v f(s-d) ? 0.9 1.5 v i f = 180 a, v gs = 0 v reverse recovery time t rr ? 63 ? ns i f = 180 a, v gs = 0 v di/dt = 100 a/ s reverse recovery charge q rr ? 120 ? nc note: * 1 pulsed test test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 duty cycle 1% = 1 s v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
NP179N055TUK preliminary r07ds1249ej0100 rev.1.00 page 3 of 6 mar 02, 2015 typical characteristics (t a = 25c) derating factor of forward bias safe operating area 0 20 40 60 80 100 120 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s total power dissipation vs. case temperature 0 50 100 150 200 300 250 350 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power disslpation - w forward bias safe operating area 0.1 1 10 100 1000 0.1 1 10 100 v ds - drain to source voltage - v i d - drain current - a transient thermal resistance vs. pulse width 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w single pulse r th(ch-c) = 0.52c/w r th(ch-a) = 83.3c/w i d(dc) = 180 a r ds(on) limited (v gs =10 v) t c = 25c single pulse pw = 1 ms pw = 10 ms dc pw = 100 s i d(pulse) = 720 a secondary breakdown limited power dissipation limited
NP179N055TUK preliminary r07ds1249ej0100 rev.1.00 page 4 of 6 mar 02, 2015 forward transfer characteristics 0.001 0.01 0.1 1 10 1000 100 012345 v gs - gate to source voltage - v i d - drain curent - a gate to source threshold voltage vs. channel temperature 0 1 2 3 4 ?100 ?50 0 50 100 150 200 t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v forward transfer admittance vs. drain current 1 10 1000 100 0.1 1 10 100 1000 i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. drain current 0 2 1 3 1 10 100 1000 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage 0 5 10 15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 100 200 300 400 500 600 800 700 0 0.2 0.6 1.0 1.4 0.4 0.8 1.2 v ds - drain to source voltage - v i d - drain current - a 0 2 1 3 r ds(on) - drain to source on-state resistance - m v gs = 10 v pulsed v gs = 10 v pulsed v ds = v gs i d = 250 a pulsed v ds = 5 v pulsed v ds = 10 v pulsed i d = 36a 90a 180a t a = ?55c ?25c 25c 75c 100c 125c 150c 175c t a = ?55c ?25c 25c 75c 100c 125c 150c 175c
NP179N055TUK preliminary r07ds1249ej0100 rev.1.00 page 5 of 6 mar 02, 2015 capacitance vs. drain to source voltage 100 1000 100000 10000 0.01 0.1 1 10 100 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf reverse recovery time vs. drain current 1 10 100 1 10 100 1000 i f - drain current - a t rr - reverse recovery time - ns switching characteristics 1 10 100 1000 0.1 1 10 1000 100 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns dynamic input/output characteristics 0 5 10 15 20 30 40 50 25 35 45 0 20 40 60 80 120 160 180 100 140 q g - gate charge - nc v ds - drain to source voltage - v 0 2 4 6 8 1 3 5 7 10 9 v gs - gate to source voltage - v source to drain diode forward voltage 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 v f(s-d) - source to drain voltage - v i f - diode forward current - a drain to source on-state resistance vs. channel temperature ?100 ?50 0 50 100 150 200 t ch - channel temperature - c 0 2 1 3 r ds(on) - drain to source on-state resistance - m pulsed v gs = 10 v v gs = 0 v v gs = 10 v i d = 90 a pulsed v dd = 28 v v gs = 10 v r g = 0 t d(off) t d(on) t f t r v gs = 0 v f = 1 mhz c iss c oss c rss di/dt = 100 a/s v gs = 0 v v gs v ds v dd = 44 v 28 v 11 v i d = 180 a
NP179N055TUK preliminary r07ds1249ej0100 rev.1.00 page 6 of 6 mar 02, 2015 package drawing (unit: mm) to-263-7pin (mp-25zt) (mass: 0.128 g typ.) renesas code: prss0008db-a 8.4 typ. 10.0 0.2 7.6 typ. 8 9.15 0.2 14.85 0.5 1.2 0.3 1.27 typ. 0.6 0.15 2.5 10.0 0.2 123 5 467 4.45 0.2 1.3 0.2 0.025 to 0.25 0.5 0 . 2 0 to 8 0.25 2.54 0.25 1. gate 2, 3, 5, 6, 7. source 4, 8. fin (drain) equivalent circuit source body diode gate drain remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np179 n055tuk data sheet rev. date description page summary 1.00 mar 02, 2015 ? first edition issued
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